OKADA Tatsuya

写真a

Title

Assistant Professor

Researcher Number(JSPS Kakenhi)

30570618

Current Affiliation Organization 【 display / non-display

  • Duty   University of the Ryukyus   Faculty of Engineering   School of Engineering_Electronic and Communication Engineering Program   Assistant Professor  

  • Concurrently   University of the Ryukyus   Graduate School of Engineering and Science   Electronic Systems and Devices   Assistant Professor  

Academic degree 【 display / non-display

  • Hiroshima University -  Doctor of Philosophy (Engineering)

  • Hiroshima University -  Master of Engineering

External Career 【 display / non-display

  • 2009.04
     
     

    University of the Ryukyus, Faculty of Engineering, Electrical and Electronics Engineering, Electronics and Electronic Materials,  

Affiliated academic organizations 【 display / non-display

  • 2005.01
    -
    Now
     

    The Japan Society of Applied Physics 

  • 2009.11
    -
    Now
     

    The Institute of Electronics, Information and Communication Engieers 

  • 2012.09
    -
    Now
     

    The Society for Information Display 

Research Interests 【 display / non-display

  • Thin Film Semiconductor,Rapid Thermal Annealing

Research Areas 【 display / non-display

  • Nanotechnology/Materials / Thin film/surface and interfacial physical properties

  • Manufacturing Technology (Mechanical Engineering, Electrical and Electronic Engineering, Chemical Engineering) / Electron device and electronic equipment

Published Papers 【 display / non-display

  • Annealing Manufacturing Method Using Continuous Blue WBC (Wavelength Beam Combining) Technique

    M. Hishida, N. Kobata, K. Miyano, M. Nobuaki, T. Okada, and T. Noguchi

    Materials   17   5399-1 - 5399-12   2024.11 [ Peer Review Accepted ]

    Type of publication: Research paper (scientific journal)

  • Crystallization of a-Si films deposited by RF sputtering using blue direct diode laser

    M. Hishida, N. Kobata, K. Miyano, M. Nobuoka, T. Okada, and T. Noguchi

    Photonics West     2023.01 [ Peer Review Accepted ]

    Type of publication: Research paper (international conference proceedings)

  • High mobility of (111)-oriented large-domain (>100 μm) poly-InSb on glass by rapid-thermal crystallization of sputter-deposited films

    T. Kajiwara, O. Shimoda, T. Okada, C. J. Koswaththage, T. Noguchi, and T. Sadoh

    Journal of Applied Physics   132 ( 14 ) 145302-1 - 145302-6   2022.10 [ Peer Review Accepted ]

    Type of publication: Research paper (scientific journal)

  • Formation of High-Mobility InSb Films on Glass by Sputtering and Rapid-Thermal Annealing

    T. Kajiwara, O. Shimoda, T. Okada, C. J. Koswaththage, T. Noguchi, and T. Sadoh

    International Conference on Solid State Devices and Materials     2022.09 [ Peer Review Accepted ]

    Type of publication: Research paper (international conference proceedings)

  • Crystallization of SiN Capped InSb Films on Glass by Rapid Thermal Annealing

    O. Shimoda, Y. Sawama, C. J. Koswaththage, T. Noguchi, T. Kajiwara, T. Sadoh, and T. Okada

    The 21st International Meeting on Information Display     396 - 396   2021.08 [ Peer Review Accepted ]

    Type of publication: Research paper (international conference proceedings)

display all >>

Presentations 【 display / non-display

  • Metal Source/Drain Structure TFTs using poly-Si Crystallized by Blue Multi-Laser Diode Annealing

    T. Okada, and T. Noguchi

    19th International Thin-Film Transistor Conference (Nara, Japan, March 24 - 26, 2025)  2025.03  -  2025.03 

  • Crystallization of InSb Films Deposited by RF Sputtering on Polyimide using RTA

    T. Higa, S. Oku, T. Noguchi, T. Kajiwara, T. Sadoh, and T. Okada

    The 72nd JSAP Spring Meeting (Noda Campus, Tokyo University of Science & Online, March 14-17, 2025) p.11_244 [17a-K103-11].  2025.03  -  2025.03 

  • Thickness Effect on Crystallization by Rapid Thermal Annealing of Sputtered InSb Films Deposited on Glass Using Ne

    S. Oku, T. Higa, T. Noguchi, T. Kajiwara, T. Sadoh, and T. Okada

    The 72nd JSAP Spring Meeting (Noda Campus, Tokyo University of Science & Online, March 14-17, 2025) p.11_243 [17a-K103-10].  2025.03  -  2025.03 

  • Effect of SiO2 capping on RTA crystallization of InSb thin films deposited by RF sputtering using Ne

    S. Oku, and T. Okada

    Proceedings of 2024 Conference of IEEJ in Okinawa (University of the Ryukyus, December 14, 2024) pp.24-26 [OKI-2024-06].  2024.12  -  2024.12 

  • Crystallization of a-Si Films Deposited by CVD using Blue Direct Diode Laser

    T. Okada, T. Noguchi, M. Hishida, K. Miyano, N. Kobata, and M. Nobuoka

    The 85th JSAP Autumn Meeting (TOKI MESSE and adjoining facilities & online, September 16-20, 2024) p.12_025 [16p-B1-4].  2024.09  -  2024.09 

display all >>